发明名称 MANUFACTURING METHOD FOR TRANSFER MASK AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To use data about a transmitted light quantity distribution of an inspection device to detect an internal defect, etc. of a transfer mask. <P>SOLUTION: A manufacturing method for a transfer mask includes: a step for, through application of a Die-to-Die comparison inspection procedure, acquiring a first transmitted light quantity distribution by exposing a first area of a thin film to an inspection light, and acquiring a second transmitted light quantity distribution by also exposing a second area to the inspection light; a step for generating a predetermined range difference distribution where a coordinate, which shows that a difference light quantity value calculated from a comparison between the first and second transmitted light quantity distributions is equal to or greater than a first threshold and is less than a second threshold, is plotted; and a step for selecting a transfer mask for which an area with highly-dense plots is not detected in the predetermined range difference distribution. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012215677(A) 申请公布日期 2012.11.08
申请号 JP20110080203 申请日期 2011.03.31
申请人 HOYA CORP 发明人 TANABE MASARU;MITSUI HIDEAKI;NISHIDA NAOKI;IWASHITA SATOSHI
分类号 G03F1/84;G01N21/956 主分类号 G03F1/84
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