| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a small and thin semiconductor device without warpage and having an excellent heat radiation property, and to provide a method of manufacturing a semiconductor device capable of manufacturing this semiconductor device while suppressing warpage of a semiconductor substrate. <P>SOLUTION: A semiconductor device has a front face first electrode formed on a front face side of a semiconductor chip and a rear face electrode formed on a rear face side of the semiconductor chip, and a thickness of a semiconductor substrate configuring the semiconductor chip is 200 μm or less. The semiconductor device has: an insulation resin layer formed on the whole of the front face of the semiconductor chip and having a thermal expansion coefficient of 2-21 ppm/°C; a front face second electrode formed to an inner peripheral part on the insulation resin layer surface; a guard electrode formed to at least an outer peripheral part on the insulation resin layer surface so as to surround the front face second electrode; and one or more penetrating via holes penetrating through the insulation resin layer and connecting between the front face first electrode and the front face second electrode. A method of manufacturing the semiconductor device is also provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
