| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device using a hard mask that can be formed in a simple manner and that is less likely to cause charge-up. <P>SOLUTION: A method of manufacturing a semiconductor device includes: a step of coating an aluminum film formation material containing a complex of an amine compound and aluminum hydride on a processed film formed on a semiconductor substrate to form a coating film; a step of performing at least one kind of processing chosen from heating processing and light irradiation processing to the coating film to form an aluminum film; a step of etching the aluminum film to form a hard mask; and a step of etching the processed film using the hard mask as a mask. <P>COPYRIGHT: (C)2013,JPO&INPIT |
