METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A silicon carbide substrate having a surface is prepared. Impurity regions (123-125) are formed by carrying out ion implantation into the silicon carbide substrate through the surface. Annealing is carried out for the purpose of activating the impurity regions. The annealing comprises: a step for irradiating the surface of the silicon carbide substrate with first laser light that has a first wavelength; and a step for irradiating the surface of the silicon carbide substrate with second laser light that has a second wavelength. The silicon carbide substrate has first and second extinction coefficients respectively at the first and second wavelengths. The ratio of the first extinction coefficient to the first wavelength is larger than 5 × 105/m. The ratio of the second extinction coefficient to the second wavelength is smaller than 5 × 105/m. Consequently, damage to the surface of the silicon carbide substrate during the laser annealing can be reduced.