| 摘要 |
A photodetector PS of an OCT device is provided with: a silicon substrate 1 comprised of a semiconductor of a first conductivity type, having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a semiconductor layer 3 of a second conductivity type formed on the first principal surface side 1a; and charge transfer electrodes 5 provided on the first principal surface 1a and transferring generated charges. In the silicon substrate, an accumulation layer 11 of the first conductivity type having a higher impurity concentration than the silicon substrate 1 is formed on the second principal surface 1b side, and an irregular asperity 10 is formed in a region opposed to at least the semiconductor region 3, in the second principal surface 1b. The region in which the irregular asperity 10 is formed on the second principal surface 1b of the silicon substrate 1 is optically exposed. |
