| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor substrate used therefor, which can achieve thinning of a semiconductor substrate efficiently without leaving an end point detection part after manufacturing the semiconductor device and without causing any problem such as spreading of a material different from that of the semiconductor substrate to a semiconductor element part. <P>SOLUTION: A semiconductor device manufacturing method of the present invention comprises at least a process of forming a trench structure 5 having a plurality of recesses 3 on a surface 1a of a semiconductor substrate 1, and a process of forming a semiconductor layer 3a on surface parts of the plurality of recesses 3 by performing heating treatment on the semiconductor substrate 1 with the trench structure 5 on which the trench structure 5 is formed, in an inert gas atmosphere or in a reductive gas atmosphere to block the surface parts of the plurality of recesses 3, to form a cavity 3b inside. <P>COPYRIGHT: (C)2013,JPO&INPIT |
