MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY

摘要

A magnetoresistive effect element includes: a magnetization free layer having an invertible magnetization; an insulating layer being adjacent to the magnetization free layer; and a magnetization fixed layer being adjacent to the insulation layer and in an opposite side of the insulation layer to the magnetization free layer. The magnetization free layer includes: a first magnetization free layer being adjacent to the insulating layer and comprising Fe or Co; and a second magnetization free layer being adjacent to the first magnetization layer and comprising NiFeB.