THREE-DIMENSIONAL INTEGRATED CIRCUIT LAMINATE

摘要

PROBLEM TO BE SOLVED: To provide a three-dimensional integrated circuit laminate which is filled with an interlaminar filler composition having high heat conductivity in a semiconductor substrate laminate such as a Si substrate in which a semiconductor device layer is formed thereon.

SOLUTION: A three-dimensional integrated circuit laminate comprises: a semiconductor substrate laminate formed by stacking at least two or more layers of semiconductor substrates in which a semiconductor device layer is formed thereon; and a first interlaminar filler layer containing a resin (A) and an inorganic filler (B) having average grain size of 0.1 μm or higher and 5 μm or lower, maximum grain size of 10 μm or lower, and heat conductivity of 2 W/mK or higher between the semiconductor substrates.

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