| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a group 13 element nitride crystal by an industrially economical method capable of stably and continuously maintaining a sufficiently high crystal growth rate. <P>SOLUTION: The method for producing the group 13 element nitride crystal comprises growing the group 13 element nitride crystal in a liquid phase containing at least Na, a group 13 element and nitrogen element. In the method, a gaseous phase making contact with the surface of the liquid phase and filling at least a space from the surface of the liquid phase to a height of 20 mm from the surface is present, and the crystal growth is carried out under a condition to satisfy formula (1): 0<(T1-T2)/T1<0.015, wherein T1(K) is the temperature of the surface of the liquid phase and T2(K) is the temperature of the gaseous phase vertically 20 mm separated from the liquid phase surface. <P>COPYRIGHT: (C)2013,JPO&INPIT |
