| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress consumption power in a bus wiring. <P>SOLUTION: In the semiconductor storage device, a sense amplifier circuit SA is connected to a bit line and detects and amplifies a signal read from a memory cell, first data latches DL1 and DL2 are connected to a sense amplifier through a first bus LB, a second data latch DL3 is connected to a second bus GB, a plurality of circuit groups Gi (i=1 to j) each including one sense amplifier circuit and one first data latch are repeatedly provided in a first direction, and the second data latch is provided between the plurality of the circuit groups and an input output buffer 5. <P>COPYRIGHT: (C)2013,JPO&INPIT |
