发明名称 DIRECT GRAPHENE GROWING METHOD
摘要 A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.
申请公布号 US2012282489(A1) 申请公布日期 2012.11.08
申请号 US201213465488 申请日期 2012.05.07
申请人 SHIN HYEON-JIN;CHOI JAE-YOUNG;WOO YUN-SUNG;YOON SEON-MI;SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN HYEON-JIN;CHOI JAE-YOUNG;WOO YUN-SUNG;YOON SEON-MI
分类号 C23C16/26;B32B9/00;B82Y30/00;B82Y40/00 主分类号 C23C16/26
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