发明名称 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM
摘要 Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid.
申请公布号 US2012282548(A1) 申请公布日期 2012.11.08
申请号 US201113521164 申请日期 2011.01.07
申请人 ENOMOTO YUICHIRO;TARUTANI SHINJI;KAMIMURA SOU;IWATO KAORU;KATO KEITA;SHIBUYA AKINORI;FUJIFILM CORPORATION 发明人 ENOMOTO YUICHIRO;TARUTANI SHINJI;KAMIMURA SOU;IWATO KAORU;KATO KEITA;SHIBUYA AKINORI
分类号 G03F7/20;C07C271/14;C07D211/46;C08F226/02;G03F7/004;G03F7/027;G03F7/075 主分类号 G03F7/20
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