发明名称 |
PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM |
摘要 |
Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid. |
申请公布号 |
US2012282548(A1) |
申请公布日期 |
2012.11.08 |
申请号 |
US201113521164 |
申请日期 |
2011.01.07 |
申请人 |
ENOMOTO YUICHIRO;TARUTANI SHINJI;KAMIMURA SOU;IWATO KAORU;KATO KEITA;SHIBUYA AKINORI;FUJIFILM CORPORATION |
发明人 |
ENOMOTO YUICHIRO;TARUTANI SHINJI;KAMIMURA SOU;IWATO KAORU;KATO KEITA;SHIBUYA AKINORI |
分类号 |
G03F7/20;C07C271/14;C07D211/46;C08F226/02;G03F7/004;G03F7/027;G03F7/075 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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