| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with stable electric characteristics by reducing the oxygen deficiency in a metal oxide. <P>SOLUTION: A semiconductor device includes a gate electrode, a gate insulation film provided on the gate electrode, a first metal oxide film provided on the gate insulation film, a source electrode and a drain electrode provided in contact with the first metal oxide film, and a passivation film provided on the source electrode and the drain electrode. The passivation film is formed by sequentially stacking a first insulation film, a second metal oxide film, and a second insulation film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
