| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element and a manufacturing method of the same, which can improve current diffusion efficiency of the nitride semiconductor light-emitting element; reduce contact resistance; and reduce operation voltage with achieving emission uniformity and a high optical output even in high driving current density. <P>SOLUTION: A nitride semiconductor light-emitting element in which an n-side and p-side electrode pads are formed on the same face side of the substrate, comprises an electrode structure that improves current distribution in the light-emitting element by forming an extension part dendritically extended from the p-side electrode pad (and the n-side electrode pad). In the case where n-side and p-side sheet resistances are sufficiently low, contact resistance between a p-type nitride semiconductor layer and a current diffusion layer is decreased and in-plane distribution of the sheet resistance becomes more uniform to improve the optical output by increase of the sheet resistance of the current diffusion layer composed of a translucent conductive film and formed on the p-type nitride semiconductor layer under a certain condition. <P>COPYRIGHT: (C)2013,JPO&INPIT |
