发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY METHOD AND CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography method and a charged particle beam lithography apparatus that implement an improved throughput. <P>SOLUTION: When a different substrate needs to be transferred to a handling chamber while a pattern that does not require high drawing precision is drawn, the transfer process is performed concurrently with the drawing process continued. When a substrate is transferred to a drawing chamber and another substrate is transferred to the handling chamber at the same time, as long as the former substrate is transferred to the drawing chamber, drawing is started even if the latter substrate has not been transferred to the handling chamber. Specifically, the pattern that is drawn in the state is a pattern that does not require high drawing precision. When a substrate needs to be transferred to the handling chamber while a pattern that requires high precision is drawn, on the other hand, the pattern drawing is interrupted and a pattern that does not require high precision is drawn until the completion of the transfer. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012216649(A) 申请公布日期 2012.11.08
申请号 JP20110080319 申请日期 2011.03.31
申请人 NUFLARE TECHNOLOGY INC 发明人 ONISHI TAKAYUKI
分类号 H01L21/027 主分类号 H01L21/027
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