| 摘要 |
Masks for patterning material layers of semiconductor devices, methods of patterning and methods of manufacturing semiconductor devices, and lithography systems are disclosed. A lithography mask includes a pattern of alternating lines and spaces, wherein the lines and spaces comprise different widths. When the lithography mask is used to pattern a material layer of a semiconductor device, the pattern of the material layer comprises alternating lines and spaces having substantially the same width. |
