SPIN TORQUE MRAM USING BIDIRECTIONAL MAGNONIC WRITING
摘要
<p>An apparatus is provided for bidirectional writing. A stack includes a reference layer on a tunnel barrier, the tunnel barrier on a free layer, and the free layer on a metal spacer. The apparatus includes an insulating magnet. A Peltier material is thermally coupled to the insulating magnet and the stack. When the Peltier/insulating magnet interface is cooled, the insulating magnet is configured to transfer a spin torque to rotate a magnetization of the free layer in a first direction. When the Peltier/insulating magnet interface is heated, the insulating magnet is configured to transfer the spin torque to rotate the magnetization of the free layer in a second direction.</p>
申请公布号
WO2012151020(A1)
申请公布日期
2012.11.08
申请号
WO2012US31938
申请日期
2012.04.03
申请人
INTERNATIONAL BUSINESS MACHINES CORP.;ABRAHAM, DAVID, W.;MOJUMDER, NILADRI, N.