发明名称 SPIN TORQUE MRAM USING BIDIRECTIONAL MAGNONIC WRITING
摘要 <p>An apparatus is provided for bidirectional writing. A stack includes a reference layer on a tunnel barrier, the tunnel barrier on a free layer, and the free layer on a metal spacer. The apparatus includes an insulating magnet. A Peltier material is thermally coupled to the insulating magnet and the stack. When the Peltier/insulating magnet interface is cooled, the insulating magnet is configured to transfer a spin torque to rotate a magnetization of the free layer in a first direction. When the Peltier/insulating magnet interface is heated, the insulating magnet is configured to transfer the spin torque to rotate the magnetization of the free layer in a second direction.</p>
申请公布号 WO2012151020(A1) 申请公布日期 2012.11.08
申请号 WO2012US31938 申请日期 2012.04.03
申请人 INTERNATIONAL BUSINESS MACHINES CORP.;ABRAHAM, DAVID, W.;MOJUMDER, NILADRI, N. 发明人 ABRAHAM, DAVID, W.;MOJUMDER, NILADRI, N.
分类号 H01L29/82 主分类号 H01L29/82
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