<111> CRYSTAL ORIENTATION INGOT SILICON SINGLE CRYSTAL AND PREPARATION METHOD THEREOF

摘要

The present invention relates to a <111> crystal orientation ingot silicon single crystal and a preparation method thereof, which method comprises the steps of 1) spreading the <111> crystal orientation single crystal silicon blocks on the entire bottom of a crucible in close arrangement, and then placing a silicon material, a dopant element raw material and a silicon material into the crucible in succession; 2) evacuating the same, and at the same time introducing an inert gas; 3) heating the crucible, so that the part of the <111> crystal orientation crystal silicon block in contact with the bottom of the crucible does not melt and the part not in contact with the bottom of the crucible, the silicon material and the dopant element raw material all melt and are fully mixed with each other on the atomic scale; and 4) upon orientation solidification, with the bottom of the crucible as a cooler end, inducing solidification growth of the silicon melt by means of the unmelted part of the <111> crystal orientation single crystal, so as to obtain the <111> crystal orientation ingot single crystal silicon. In the present invention, an ingot crystal with a single crystal percentage of up to 95% can be obtained, which significantly reduces the costs of single crystal silicon used for the manufacture of solar cells.