| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist pattern formation method capable of forming a resist pattern in which height variations of a convex part are suppressed even when pattern miniaturization is in progress. <P>SOLUTION: A pattern formation method includes a pattern formation step (S2, S3, S4) of forming a concave-convex pattern on a resist film and a removal step (S6) of etching a bottom of a concave part of the concave-convex pattern. This method further includes a protective film formation step (S5) of forming a protective film by chemical deposition processing after the pattern formation step (S2, S3, S4) and before the removal step (S6). The protective film formation step (S5) causes growth of the protective film so that protective films formed in neighboring convex parts of the concave-convex pattern come into contact with each other to form a continuous film and the height of the level difference on the film surface side of the continuous film becomes smaller than a difference in the heights of the hight variations of the convex part. <P>COPYRIGHT: (C)2013,JPO&INPIT |
