| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory and a system capable of preventing malfunction of a pseudo SRAM having a page operation function. <P>SOLUTION: A latency determination unit activates a latency extension signal when an activation of a chip enabling signal conflicts with a refresh request. A data control unit increases a reading latency during the activation of the latency extension signal as compared with that during the deactivation of the latency extension signal. The data control unit increases the reading latency during the activation of the latency extension signal as compared with that during the deactivation of the latency extension signal, and sets the difference between the reading latency for a first access request and that for a later access request during the activation of the latency extension signal to be equal to the difference between the reading latency for a first access request and that for a later access request during the deactivation of the latency extension signal. <P>COPYRIGHT: (C)2013,JPO&INPIT |
