发明名称 SEMICONDUCTOR DEVICE CONDUCTIVE PATTERN STRUCTURES AND METHODS OF MANUFACTURING THE SAME
摘要 A conductive pattern structure includes a first insulating interlayer on a substrate, metal wiring on the first insulating interlayer, a second insulating interlayer on the metal wiring, and first and second metal contacts extending through the second insulating interlayer. The first metal contacts contact the metal wiring in a cell region and the second metal contact contacts the metal wiring in a peripheral region. A third insulating interlayer is disposed on the second insulating interlayer. Conductive segments extend through the third insulating interlayer in the cell region and contact the first metal contacts. Another conductive segment extends through the third insulating interlayer in the peripheral region and contacts the second metal contact. The structure facilitates the forming of uniformly thick wiring in the cell region using an electroplating process.
申请公布号 US2012280391(A1) 申请公布日期 2012.11.08
申请号 US201213440123 申请日期 2012.04.05
申请人 KIM HEI-SEUNG;CHOI GIL-HEYUN;PARK JI-SOON;LEE JONG-MYEONG;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM HEI-SEUNG;CHOI GIL-HEYUN;PARK JI-SOON;LEE JONG-MYEONG
分类号 H01L27/10;H01L21/768;H01L23/528 主分类号 H01L27/10
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