| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a polycrystalline silicon sintered body having a low impurity concentration. <P>SOLUTION: The method for producing a polycrystalline silicon sintered body includes firing a molded body comprising a silicon powder and a molding aid at a sintering temperature of silicon. The molding aid is a metal, an alloy, a metal compound not substantially containing oxygen and carbon atoms, or a mixture thereof, the metal, alloy and metal compound having a vapor pressure at the sintering temperature of ≥10<SP POS="POST">-1</SP>atm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
