发明名称 SUBSTRATE TREATMENT APPARATUS, SUBSTRATE TREATMENT METHOD, CONTROL PROGRAM AND RECORDING MEDIUM
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus and a substrate treatment method that can control the uniformity of the thickness of a film formed on a substrate. <P>SOLUTION: The substrate treatment apparatus includes: an outer tube for treating a substrate; a heating device for optically heating the substrate stored in the outer tube from a periphery of the substrate; a cooling device for directing a fluid in the vicinity of the periphery of the substrate optically heated by the heating device to cool the periphery of the substrate; a temperature detection section for detecting a temperature in the outer tube; and a control section for controlling the heating device and the cooling device in accordance with the temperature detected by the temperature detection section such that the optical heating of the substrate by the heating device and the cooling of the periphery of the substrate by the cooling device produce a temperature difference between a central region of the substrate and the peripheral region of the substrate while maintaining a central temperature of the substrate at a predetermined temperature. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012216851(A) 申请公布日期 2012.11.08
申请号 JP20120127093 申请日期 2012.06.04
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 UENO MASAAKI;SHIMADA SHINICHI;HANASHIMA TAKEO;MORIKAWA HARUO;HAYASHIDA AKIRA
分类号 H01L21/31;C23C16/46;H01L21/205 主分类号 H01L21/31
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