发明名称 |
METHOD FOR MANUFACTURING HIGH QUALITY GRAPHENE USING CONTINUOUS HEAT TREATMENT CHEMICAL VAPOR DEPOSITION METHOD |
摘要 |
Provided is a method for manufacturing graphene for increasing the size of a crystal grain of the graphene. In the method for manufacturing graphene of the present invention, a substrate having a catalyst layer made up of a transition metal formed thereon, is charged inside a chamber, and a vapor carbon supply source is provided inside the chamber. The catalyst layer is locally heated, and a continuous heat treatment for moving the heated area is carried out, so that a carbon component is dissolved in the catalyst layer, after which the graphene is extracted from the dissolved carbon component to the surface of the catalyst layer. |
申请公布号 |
WO2012150763(A2) |
申请公布日期 |
2012.11.08 |
申请号 |
WO2012KR01860 |
申请日期 |
2012.03.15 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY;JEON, SEOK-WOO;LEE, JIN-SUP;OH, SE-RAN |
发明人 |
JEON, SEOK-WOO;LEE, JIN-SUP;OH, SE-RAN |
分类号 |
C23C16/44;C01B31/02;C23C16/26 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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