发明名称 METHOD FOR MANUFACTURING HIGH QUALITY GRAPHENE USING CONTINUOUS HEAT TREATMENT CHEMICAL VAPOR DEPOSITION METHOD
摘要 Provided is a method for manufacturing graphene for increasing the size of a crystal grain of the graphene. In the method for manufacturing graphene of the present invention, a substrate having a catalyst layer made up of a transition metal formed thereon, is charged inside a chamber, and a vapor carbon supply source is provided inside the chamber. The catalyst layer is locally heated, and a continuous heat treatment for moving the heated area is carried out, so that a carbon component is dissolved in the catalyst layer, after which the graphene is extracted from the dissolved carbon component to the surface of the catalyst layer.
申请公布号 WO2012150763(A2) 申请公布日期 2012.11.08
申请号 WO2012KR01860 申请日期 2012.03.15
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY;JEON, SEOK-WOO;LEE, JIN-SUP;OH, SE-RAN 发明人 JEON, SEOK-WOO;LEE, JIN-SUP;OH, SE-RAN
分类号 C23C16/44;C01B31/02;C23C16/26 主分类号 C23C16/44
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