发明名称
摘要 <p>In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.</p>
申请公布号 JP5065516(B2) 申请公布日期 2012.11.07
申请号 JP20110165160 申请日期 2011.07.28
申请人 发明人
分类号 H01J37/244 主分类号 H01J37/244
代理机构 代理人
主权项
地址