发明名称 |
MEMORY DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film. |
申请公布号 |
EP2519972(A1) |
申请公布日期 |
2012.11.07 |
申请号 |
EP20100840858 |
申请日期 |
2010.12.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO. LTD. |
发明人 |
SHIONOIRI, YUTAKA;MIYAKE, HIROYUKI;KATO, KIYOSHI |
分类号 |
H01L27/115;G11C16/04;H01L27/12;H01L27/13 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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