EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING LED CHIP

摘要

A method for manufacturing an epitaxial wafer for a light emitting diode (LED) is provided. The method may comprise: forming a back coating layer on a back surface of a substrate; forming a buffer layer on a top surface of the substrate; forming an N-type semiconductor layer on the buffer layer; forming a multi-quantum well layer on the N-type semiconductor layer; and forming a P-type semiconductor layer on the multi-quantum well layer. An epitaxial wafer and a method for manufacturing an LED chip are also provided.