| 摘要 |
PURPOSE: Prevention of line bending and tilting for etching with a tri-layer mask is provided to remove a hard mask by selectively etching the hard mask in an organic mask and an etching layer. CONSTITUTION: A hard mask is used as an etching mask. An organic mask layer is etched(112). The hard mask is selectively etched in an organic mask and an etching layer. The hard mask is removed(116). Features are etched in the etching layer using the organic mask as an etching mask(120). [Reference numerals] (104) Placing a wafer with a photoresist mask, a hard mask layer, an organic layer, and an etching layer in a plasma processing chamber; (108) Etching the hard mask layer using a photoresist mask as an etching mask; (112) Etching the organic mask layer using a hard mask as the etching mask; (116) Removing the hard mask; (120) Etching the etching layer using an organic mask as the etching mask; (124) Removing the wafer from the plasma processing chamber; (AA) Start; (BB) Stop
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