| 摘要 |
Method for manufacturing a hybrid MOSFET device comprising a first and a second MOSFET having respectively a first and a second channel material. A III-V-on-insulator stack is manufactured on a second substrate which is subsequently bonded to a first substrate. The III-V layer (103) and the insulator layer are selectively removed in a first region (I, I'), thereby exposing a semiconductor layer (107, 108) of the first substrate. A first gate stack (109, 109') of the first MOSFET is formed on the exposed semiconductor layer (107, 108) in the first region. A second gate stack (109'') of the second MOSFET is formed on the III-V layer (103) in the second region (II). |
