| 摘要 |
PURPOSE: A method for detecting defects of a semiconductor device is provided to rapidly detect the defects on the surface of a wafer using a scanning electron microscope. CONSTITUTION: A device isolation layer(2) is formed on a substrate(1) with a cell region and a peripheral circuit region. The substrate includes an insulation layer which covers a plurality of patterns. The plurality of the patterns and the insulation layer are planarized. An etch stop layer(8) covers a peripheral circuit region. An insulation layer of the cell region is removed. The surface of the substrate without the insulation layer is photographed. [Reference numerals] (AA) Cell region; (BB) Peripheral circuit region
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