| 摘要 |
<p>PURPOSE: A nonvolatile memory device of a vertical structure and a manufacturing method thereof are provided to prevent a gate dielectric layer from protruding to a substrate by using poly silicon as a sacrificial layer for a ground selection transistor. CONSTITUTION: Insulation layers and second sacrificial layers are alternatively laminated on a first sacrificial layer. A first sacrificial layer is exposed by passing through the second sacrificial layers and the insulation layers. A first opening part is formed to expose a first part of a substrate(100) by etching the exposed first sacrificial layer. A gate dielectric layer(140) is formed on the side and the lower side of the first opening part. A channel layer electrically connected to the substrate is formed on the gate dielectric layer. A second opening part is separated from the first opening part and exposes a second part of the substrate. Conductive material layers fill an empty area formed by removing the first sacrificial layer and the second sacrificial layer.</p> |
