| 摘要 |
<p>PURPOSE: A thin film transistor array substrate is provided to form a barrier layer on a copper wire when an organic insulating film is formed on the copper wire, thereby preventing spreading of copper. CONSTITUTION: A gate electrode(204) includes the copper. An organic insulating film(206) is located on the gate electrode. A semiconductor layer(215) is located on a gate insulating film. A passivation film(225) is located on a source electrode(217) and a drain electrode(219). A barrier layer(210) covers the gate electrode. Spreading of copper is prevented by forming the barrier layer.</p> |
