| 摘要 |
PURPOSE: A nonvolatile memory device and a verifying method thereof are provided to improve program performance by accurately counting the number of fail bits. CONSTITUTION: A page buffer unit(220) reads data from the selected memory cell of a memory cell array and stores the read data. A controller(270) generates a reference current generation signal, a first current control signal and a second current control signal corresponding to the deviation of cell currents flowing in a unit memory cell in a read operation and the number of detected fail bits. A fail bit detecting unit(250) controls one of a reference current amount or a data read current amount of the page buffer unit. [Reference numerals] (210) Memory cell array; (220) Page buffer unit; (230) Y decoder; (240) X decoder; (250) Fail bit detecting unit; (252) Comparing unit; (254) Offset control unit; (260) Voltage providing unit; (270) Controller; (272) Current control unit
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