| 摘要 |
PURPOSE: A patterning process is provided to form an optimal pattern by using an organic solvent development. CONSTITUTION: A silicon-containing film is formed on a body to be processed. A photoresist film is formed by using chemical amplification type resist composition on the silicon-containing film. The photoresist film is exposed to a high energy beam. The unexposed area of the photoresist film is dissolved by using a developer of an organic solvent. A negative pattern is obtained. [Reference numerals] (AA) Composite application and plastification for forming a silicon containing film; (BB) Resist application; (CC) Exposure to light; (DD) Mask; (EE) Thermal process after exposure to light; (FF) A part with a changed contact angle of the silicon containing film by acid generated in the photoresist film; (GG) Organic solvent phenomenon, rinse; (HH,II,JJ) Etching |
