| 摘要 |
PURPOSE: A horizontal flow atomic layer depositing device is provided to prevent the thickness reduction of a thin film in the center of a substrate by increasing an amount of flowing gas per area. CONSTITUTION: A reactor cover(220) defines a reaction chamber in contact with a substrate support stand(210). A gas inlet part(230) is integrated with the reactor cover and includes an inlet port which defines an inflow path of process gas. A gas outlet part(240) includes an outlet port which defines an outflow path of the process gas. |
