| 摘要 |
A light emitting device is provided to increase a recombination light emitting efficiency by forming a multi-cladding layer on the last well layer of an active layer, thereby improving the light emitting efficiency. A first conductive clad layer(400), an active layer(500), and a second conductive cladding layer(700) are sequentially formed on a substrate(100). A multi-cladding layer is formed on a last well layer(510) of the active layer. The first conductive cladding layer is an n-type semiconductor layer, and the second conductive cladding layer is a p-type semiconductor layer. The multi-cladding layer is grown at a temperature of 790 to 900 deg.C. |
