| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to secure the resistance of a vertical gate by securing the thickness of a tungsten layer which remains in the sidewall of a trench when the vertical gate is formed. CONSTITUTION: A hard mask nitride film pattern(22) is formed on the upper side of a substrate(21) including a buried bit line. An active pillar is formed by etching the substrate using the hard mask nitride film pattern as an etch barrier. The sidewall of the active pillar is etched. A gate conductive layer is formed to fill a part of the trench formed by the active pillar. A spacer is formed in the sidewall of the trench on the gate conductive layer. A vertical gate is formed by etching the gate conductive layer using the spacer as an etch barrier. [Reference numerals] (AA) Sidewall etching(SC-1 solution)</p> |
