Photovoltaic cell including a buffer layer of zinc and tin oxide(s)

摘要

The cell (100) has upper and lower electrode layers (3, 6) placed on two sides of a photovoltaic film (5), where the lower electrode layer close to a transparent glass substrate (10) is formed by a coating made of transparent conductive oxide. The transparent conductive oxide is a zinc oxide doped with an element. A buffer layer (4) is interposed between the oxide and the film, where the layer is formed by oxide/by a mixture of zinc and tin oxides in which molar ratio of tin to zinc ranges between 1.5 and 5.7. The buffer layer has thickness ranging between 150 nm and 200 nm.