| 摘要 |
PURPOSE: A voltage level converter and a semiconductor memory device including the same are provided to correct a duty cycle error by controlling the current driving power of transistors. CONSTITUTION: A voltage level converting unit(100) includes a voltage pull-up unit and a voltage pull-down unit. The voltage pull-up unit drives a first current(I1) between an input node and an external voltage for an output in response to a first data and outputs a second data by driving a second current(I2) between an output node and the external voltage for the output. The voltage pull-down unit drives a third current(I3) with a ground voltage in an input node in response to the first data and outputs a second data by driving a fourth current(I4) with the ground voltage in an output node. The first data is a signal driven with an external potential and the external voltage for the output has the potential which is lower than the external voltage. |
