发明名称 ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING SAME
摘要 <p>An active matrix substrate includes a plurality of scanning lines (11a) extending parallel to each other; a plurality of signal lines (16a) extending parallel to each other in a direction crossing the scanning lines (11a); a plurality of TFTs (5) each provided at each of intersections of the scanning lines (11 a) and the signal lines (16a), and each including a semiconductor layer (4a) and a source electrode (16aa) and a drain electrode (16b) which are formed on the semiconductor layer (4a) in a layer in which the signal lines (16a) are formed; and a coating type insulating layer formed between each of the scanning lines (11a) and each of the signal lines (16a). A plurality of openings (15a) are formed in the insulating layer such that each of the semiconductor layers (4a) is exposed, and at least part of a peripheral end of the opening (15a) of the insulating layer is positioned on an inner side relative to each of peripheral ends of the semiconductor layers (4a).</p>
申请公布号 EP2521180(A1) 申请公布日期 2012.11.07
申请号 EP20100840739 申请日期 2010.12.07
申请人 SHARP KABUSHIKI KAISHA 发明人 KATSUI, HIROMITSU;NAKAMURA, WATARU
分类号 H01L29/786;G02F1/1333;G02F1/1362;G02F1/1368;G09F9/30;H01L21/3105;H01L21/3213;H01L21/768;H01L27/12 主分类号 H01L29/786
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