发明名称 |
ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>An active matrix substrate includes a plurality of scanning lines (11a) extending parallel to each other; a plurality of signal lines (16a) extending parallel to each other in a direction crossing the scanning lines (11a); a plurality of TFTs (5) each provided at each of intersections of the scanning lines (11 a) and the signal lines (16a), and each including a semiconductor layer (4a) and a source electrode (16aa) and a drain electrode (16b) which are formed on the semiconductor layer (4a) in a layer in which the signal lines (16a) are formed; and a coating type insulating layer formed between each of the scanning lines (11a) and each of the signal lines (16a). A plurality of openings (15a) are formed in the insulating layer such that each of the semiconductor layers (4a) is exposed, and at least part of a peripheral end of the opening (15a) of the insulating layer is positioned on an inner side relative to each of peripheral ends of the semiconductor layers (4a).</p> |
申请公布号 |
EP2521180(A1) |
申请公布日期 |
2012.11.07 |
申请号 |
EP20100840739 |
申请日期 |
2010.12.07 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KATSUI, HIROMITSU;NAKAMURA, WATARU |
分类号 |
H01L29/786;G02F1/1333;G02F1/1362;G02F1/1368;G09F9/30;H01L21/3105;H01L21/3213;H01L21/768;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|