| 摘要 |
PURPOSE: A method for forming an oxide layer and a method for manufacturing a semiconductor device including the oxide layer are provided to obtain an oxide layer with superior step coverage and enhance the electric characteristics of a semiconductor device by arranging the oxide layer in the semiconductor device. CONSTITUTION: A method for forming an oxide layer comprises the steps of: forming a layer of inhibitor functional groups on a substrate(S11), forming a layer of the precursor of a first material on the layer of inhibitor functional groups(S12), and oxidizing the first material precursor to obtain a layer of the oxide of the first material, wherein the inhibitor functional groups are removed from the substrate(S13). [Reference numerals] (AA) Start; (BB) No; (CC) Yes; (DD) End; (S10) Holding a substrate in a reaction chamber; (S11) Forming a layer of inhibitor functional groups on the substrate; (S12) Forming a layer of the precursor of a first material on the layer of inhibitor functional groups; (S13) Oxidizing the first material precursor to obtain a layer of the oxide of the first material; (S14) Oxide layer completed?
|
