| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to secure large etching process margin in a bit line forming process by using a barrier pattern as an etch mask. CONSTITUTION: An interlayer dielectric layer(116) is formed on a substrate with a gate and a source/drain(104). A barrier pattern(118b,118c) is formed on the interlayer dielectric layer on which a bit line is formed. A storage node contact hole is formed by using an etch mask with a barrier pattern. The storage node contact hole is filled with conductive materials and is planarized to remove the barrier pattern. A bit line is electrically connected to the source/drain.
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