发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
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申请公布号 |
US8304350(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20100705004 |
申请日期 |
2010.02.12 |
申请人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;SHIMADA HIROYUKI;SAKAMA MITSUNORI;ABE HISASHI;TERAMOTO SATOSHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;SHIMADA HIROYUKI;SAKAMA MITSUNORI;ABE HISASHI;TERAMOTO SATOSHI |
分类号 |
H01L21/461;C23C16/54;H01L21/00 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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