发明名称 |
Method for manufacturing stacked contact plugs |
摘要 |
A semiconductor device manufacturing method including: forming a first interlayer insulating film on a semiconductor substrate; forming a first hole in the first interlayer insulating film; forming a barrier film inside the first hole; filling a conductive material in the first hole to form a first plug; forming a second interlayer insulating film on the first interlayer insulating film; forming a second hole reaching the first plug in the second interlayer insulating film; selectively etching an upper end of the barrier film inside the second hole; and forming a second plug for connection to the first plug inside the second hole. |
申请公布号 |
US8304340(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20100818570 |
申请日期 |
2010.06.18 |
申请人 |
IZAWA MITSUTAKA;ELPIDA MEMORY, INC. |
发明人 |
IZAWA MITSUTAKA |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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