| 摘要 |
PURPOSE: A metal oxide semiconductor gas sensor having a nano structure and a manufacturing method thereof are provided to enhance the sensitivity of a gas sensor by allowing each contact between a target gas and a gas sensing layer because a metal oxide semiconductor having a nano structure, formed by using an oblique angle deposition method, is used as the gas sensing layer. CONSTITUTION: A metal oxide semiconductor gas sensor having a nano structure comprises a substrate(100), a first electrode(200), a gas sensing layer(300), a second electrode(400), and a controlling unit(500). The first electrode is formed on the top of the substrate. The gas sensing layer has a nano structure and is composed of a metal semiconductor. The gas sensing unit reacts with a target gas so that the electrical conductivity is changed. The gas sensing layer is formed by an oblique angle deposition method. The second electrode is formed on the top of the metal oxide semiconductor. The controlling unit measures the electrical conductivity of the gas sensing layer by letting predetermined current flow through the first and second electrodes, thereby sensing the target gas. [Reference numerals] (500) Controlling unit
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