发明名称 Method of manufacturing a metal wiring structure
摘要 In a method of manufacturing a metal wiring structure, a first metal wiring and a first barrier layer are formed on a substrate, and the first barrier layer is nitridated. An insulating interlayer is formed on the substrate so as to extend over the first metal wiring and the first barrier layer. Part of the insulating interlayer is removed to form a hole exposing at least part of the first metal wiring and part of the first barrier layer. A nitridation plasma treatment is performed on the exposed portion of the first barrier layer. A second barrier layer is formed along the bottom and sides of the hole. A plug is formed on the second barrier layer to fill the hole.
申请公布号 US8304343(B2) 申请公布日期 2012.11.06
申请号 US201113240109 申请日期 2011.09.22
申请人 CHOI KYUNG-IN;LEE HYEON-DEOK;CHOI GIL-HEYUN;LEE JONG-MYEONG;SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI KYUNG-IN;LEE HYEON-DEOK;CHOI GIL-HEYUN;LEE JONG-MYEONG
分类号 H01L21/768 主分类号 H01L21/768
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