发明名称 Semiconductor device and its manufacturing method
摘要 It is an object of the present invention to provide laser irradiation apparatus and method which can decrease the proportion of the microcrystal region in the whole irradiated region and can irradiate a semiconductor film homogeneously with a laser beam. A low-intensity part of a laser beam emitted from a laser oscillator is blocked by a slit, the laser beam is deflected by a mirror, and the beam is shaped into a desired size by using two convex cylindrical lenses. Then, the laser beam is delivered to the irradiation surface.
申请公布号 US8304313(B2) 申请公布日期 2012.11.06
申请号 US20050585128 申请日期 2005.08.12
申请人 TANAKA KOICHIRO;ISOBE ATSUO;YAMAMOTO YOSHIAKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO;ISOBE ATSUO;YAMAMOTO YOSHIAKI
分类号 H01L21/8236 主分类号 H01L21/8236
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