发明名称 Photomasks, methods of exposing a substrate to light, methods of forming a pattern, and methods of manufacturing a semiconductor device
摘要 The method of forming a pattern includes forming a first photosensitive layer pattern including a first pattern in a first region of a substrate and a second pattern in a second region of the substrate, by performing a first photolithography process using a photomask having a first mask region and a second mask region. The first pattern is transferred from the first mask region, and the second pattern is transferred from the second mask region. The method further includes forming a second photosensitive layer pattern including a third pattern in the second region of the substrate and a fourth pattern in the first region of the substrate, by performing a second photolithography process using the photomask. The third pattern is transferred from the first mask region, and the fourth pattern is transferred from the second mask region.
申请公布号 US8304173(B2) 申请公布日期 2012.11.06
申请号 US20100847274 申请日期 2010.07.30
申请人 YU SANG-YONG;KIM SUNG-HYUCK;YOON GI-SUNG;SAMSUNG ELECTRONICS CO., LTD. 发明人 YU SANG-YONG;KIM SUNG-HYUCK;YOON GI-SUNG
分类号 G03F7/20 主分类号 G03F7/20
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