发明名称 |
Photomasks, methods of exposing a substrate to light, methods of forming a pattern, and methods of manufacturing a semiconductor device |
摘要 |
The method of forming a pattern includes forming a first photosensitive layer pattern including a first pattern in a first region of a substrate and a second pattern in a second region of the substrate, by performing a first photolithography process using a photomask having a first mask region and a second mask region. The first pattern is transferred from the first mask region, and the second pattern is transferred from the second mask region. The method further includes forming a second photosensitive layer pattern including a third pattern in the second region of the substrate and a fourth pattern in the first region of the substrate, by performing a second photolithography process using the photomask. The third pattern is transferred from the first mask region, and the fourth pattern is transferred from the second mask region. |
申请公布号 |
US8304173(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20100847274 |
申请日期 |
2010.07.30 |
申请人 |
YU SANG-YONG;KIM SUNG-HYUCK;YOON GI-SUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YU SANG-YONG;KIM SUNG-HYUCK;YOON GI-SUNG |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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