发明名称 |
Data output circuit of semiconductor memory device |
摘要 |
A data output circuit of a semiconductor memory device includes a pipe latch unit configured to store input parallel data and align the stored data in response to a plurality of alignment control signals to output serial output data, and an alignment control signal generating unit configured to generate the plurality of alignment control signals in response to a burst-type information and a seed address group, wherein the alignment control signal generating unit generates the alignment control signals to swap data in a swap mode where the burst-type is a certain type and bits of the seed address group are certain values.
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申请公布号 |
US8305819(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20100751425 |
申请日期 |
2010.03.31 |
申请人 |
KIM KWANG-HYUN;LEE KANG-YOUL;HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM KWANG-HYUN;LEE KANG-YOUL |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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