发明名称 |
Semiconductor pressure sensor |
摘要 |
An object of the present invention is to solve problems in that aluminum electrodes, aluminum wires, and I/O terminals are corroded by corrosive gasses when a pressure of a pressure medium containing corrosive matters such as exhaust gas is measured with a semiconductor sensor; and improve not only the corrosion resistance of the sensor chip but also the corrosion resistance of the portion particularly functioning as the pressure receiver. Each of the aluminum electrodes that is likely to be corroded portions is prevented from being corroded by forming a titanium-tungsten layer and gold layer on the aluminum electrode. The connecting wires are prevented from being corroded by corrosive matters by using gold wires. The I/O terminals are also prevented from being corroded by applying gold plating.
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申请公布号 |
US8304847(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20080092226 |
申请日期 |
2008.08.08 |
申请人 |
KAMINAGA TOSHIAKI;HAYASHI MASAHIDE;UEYANAGI KATSUMICHI;SAITO KAZUNORI;NISHIKAWA MUTSUO;FUJI ELECTRIC CO., LTD. |
发明人 |
KAMINAGA TOSHIAKI;HAYASHI MASAHIDE;UEYANAGI KATSUMICHI;SAITO KAZUNORI;NISHIKAWA MUTSUO |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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